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Transcend 2TB 220S NVMe M.2 2280 PCIe Gen3x4 With Dram Cache Internal SSD

Transcend 2TB 220S NVMe M.2 2280 PCIe Gen3x4 With Dram Cache Internal SSD
Transcend 2TB 220S NVMe M.2 2280 PCIe Gen3x4 With Dram Cache Internal SSD
Transcend 2TB 220S NVMe M.2 2280 PCIe Gen3x4 With Dram Cache Internal SSD
Transcend 2TB 220S NVMe M.2 2280 PCIe Gen3x4 With Dram Cache Internal SSD
Transcend 2TB 220S NVMe M.2 2280 PCIe Gen3x4 With Dram Cache Internal SSD
Transcend 2TB 220S NVMe M.2 2280 PCIe Gen3x4 With Dram Cache Internal SSD
Transcend 2TB 220S NVMe M.2 2280 PCIe Gen3x4 With Dram Cache Internal SSD
  • Status: In Stock
  • Brand: Transcend
  • Model: TS2TMTE220S
17,800৳
Ex Tax: 17,800৳

Key Features

Generel information
Capacity 2TB
Dimensions (W x D x H) 80 mm x 22 mm x 3.58 mm (3.15" x 0.87" x 0.14")
Flash Type 3D NAND flash
Interface NVMe PCIe Gen3 x4
MTBF 2,000,000 hour(s)
Operating Temperature 0°C (32°F) ~ 70°C (158°F
Operating voltage 3.3V±5%
Sequential R/W Read Speed (Max.) up to 3,500 MB/sWrite Speed (Max.) 2,700 MB/s
Weight 0.010000
Main Features
Form Factor M.2 2280
Warranty Information
Warranty 5 Years

Transcend 2TB 220S NVMe M.2 2280 PCIe Gen3x4 With Dram Cache Internal SSD

Transcend's PCIe SSD 220S aims at high-end applications, such as digital audio/video production, gaming, and enterprise use, which require constant processing heavy workloads with no system lags or slowdowns of any kind. Utilizing the PCI Express Gen3 x4 interface supported by the latest NVMe standard, 3D NAND flash memory, an 8-channel controller, and a DRAM cache, the PCIe SSD 220S offers supreme transfer speeds that override others.

Transcend's PCIe SSD 220S follows NVMe 1.3 and utilizes the PCIe Gen3 x4 interface, meaning four lanes are used for transmitting and receiving data simultaneously. Its 8-channel controller supports ultra high data throughput, resulting in compelling performance of up to 3,500MB/s read and 2,700MB/s write.

PCIe (or PCI Express) is a much faster interface than SATA (or Serial ATA) for connecting a host computer to solid-state storage devices over one or more lanes consisting of one transmit and one receive serial interface in each lane, meaning it can better fulfill new performance requirements.

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